Comparative Analysis of the Characteristics of Schottky-Type and Ohmic-Type p-GaN Gate GaN HEMTs

P-GaN gate GaN HEMTs can be categorized into Schottky-type and ohmic-type regarding the gate contact, resulting in different behaviors of the transistors. This paper presents a comparative study of both types based on experimental results. Extensive characterizations are conducted including leakage current, intrinsic capacitances, output characteristics, and the threshold voltage instability. The impact of various parameters on the transistor characteristics is studied under both static and dynamic measurement conditions. The investigation is application-oriented, aiming to enhance understanding and facilitate the application of p-GaN gate GaN transistors.