Development of a High-Endurance Ferroelectric Capacitor for FeRAM in Automotive and Industrial Applications

A high-endurance ferroelectric capacitor (FC) incorporating a Pb(Zr, Ti)O3 (PZT) layer, fabricated via liquid delivery metal-organic chemical vapor deposition, and a sputter-deposited Bi-doped SrRuO3 (B-SRO) interlayer has been successfully developed. This FC exhibits excellent electrical properties, including a low coercive voltage, achieved by thinning the PZT layer, allowing it to function effectively across a wide temperature range of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$- 45~^{\circ }$ </tex-math></inline-formula>C to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$125~^{\circ }$ </tex-math></inline-formula>C, and at an operating voltage of 1.8 V. Typically, thinning the ferroelectric layer leads to increased leakage current and degradation in reliability, such as retention and endurance. However, our developed FC demonstrates robust retention after baking at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$150~^{\circ }$ </tex-math></inline-formula>C for 1000 h, low leakage current, and a predicted endurance of at least <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{15}}$ </tex-math></inline-formula> cycles. Our developed FC has potential applications in ferroelectric random access memory (FeRAM) operating at 1.8 V with an endurance of at least over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{14}}$ </tex-math></inline-formula> cycles used for automotive and industrial devices within the specified temperature range.

Authors

Institutions

Publication Details

Journal
IEEE Transactions on Electron Devices
Published
2024-12-19
DOI
https://doi.org/10.1109/ted.2024.3514579
Citations
4
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.83
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Development of a High-Endurance Ferroelectric Capacitor for FeRAM in Automotive and Industrial Applications

Hitoshi Saitô, Takashi Eshita, Satoru Mihara, Kazuaki Takai et al.
4 citations
IEEE Transactions on Electron Devices
Ferroelectric and Negative Capacitance Devices
0.83
article

Development of a High-Endurance Ferroelectric Capacitor for FeRAM in Automotive and Industrial Applications

Hitoshi Saitô, Takashi Eshita, Satoru Mihara, Kazuaki Takai, Keigo Nakamura, Yoji Okita, Soichiro Ozawa, K. Suezawa, M. Oikawa, Wensheng Wang, Katsuya Nagai, Naoyuki Sato, M. Nakabayashi, Yukinobu Hikosaka
article en
4 citations

Abstract

A high-endurance ferroelectric capacitor (FC) incorporating a Pb(Zr, Ti)O3 (PZT) layer, fabricated via liquid delivery metal-organic chemical vapor deposition, and a sputter-deposited Bi-doped SrRuO3 (B-SRO) interlayer has been successfully developed. This FC exhibits excellent electrical properties, including a low coercive voltage, achieved by thinning the PZT layer, allowing it to function effectively across a wide temperature range of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$- 45~^{\circ }$ </tex-math></inline-formula>C to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$125~^{\circ }$ </tex-math></inline-formula>C, and at an operating voltage of 1.8 V. Typically, thinning the ferroelectric layer leads to increased leakage current and degradation in reliability, such as retention and endurance. However, our developed FC demonstrates robust retention after baking at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$150~^{\circ }$ </tex-math></inline-formula>C for 1000 h, low leakage current, and a predicted endurance of at least <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{15}}$ </tex-math></inline-formula> cycles. Our developed FC has potential applications in ferroelectric random access memory (FeRAM) operating at 1.8 V with an endurance of at least over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{14}}$ </tex-math></inline-formula> cycles used for automotive and industrial devices within the specified temperature range.

IEEE Transactions on Electron DevicesVol. 72(2)
Ferring Pharmaceuticals (Switzerland) (CH), Socionext (Japan) (JP), CellFree Sciences (Japan) (JP), Murata (Japan) (JP)
Openalex Percentile: Top 26%
Ferroelectric and Negative Capacitance Devices
0.83
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.