On-Wafer R<sub>ON</sub> Degradation Analysis of 100 V p-GaN HEMTs Emulating Low- and High-Side Operation in Half Bridge Circuits
We developed a custom setup for the on-wafer dynamic <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R$</tex><inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> evaluation of 100 V p-GaN HEMTs emulating low- (LS) and high-side (HS) operation in integrated half-bridge circuits. We found that RON degradation is more pronounced in HS configuration compared to the LS one, while similar time constants and activation energies were extracted. This suggests that the underlying physical mechanism is the same in both cases, i.e., hole emission from C-related acceptors in the GaN buffer. Numerical device simulations were carried out to explain the different degree of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R$</tex><inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> degradation in LS and HS operation.
Authors
- Marcello Cioni (ORCID: https://orcid.org/0000-0001-8302-6641)
- Nicolò Zagni (ORCID: https://orcid.org/0000-0003-2454-1883)
- G. Verzellesi (ORCID: https://orcid.org/0000-0001-5770-6512)
- Alessandro Chini (ORCID: https://orcid.org/0000-0002-5865-271X)
- Giacomo Cappellini (ORCID: https://orcid.org/0000-0003-4730-3941)
- Maria Eloisa Castagna (ORCID: https://orcid.org/0000-0002-7864-6085)
- Giovanni Giorgino (ORCID: https://orcid.org/0000-0002-9462-0328)
- Davide Orlandini
- Lorenzo Modica (ORCID: https://orcid.org/0009-0001-9402-2459)
- Ferdinando Iucolano
Institutions
- University of Modena and Reggio Emilia (IT)
- STMicroelectronics (Italy) (IT)
Publication Details
- Published
- 2024-09-16
- DOI
- https://doi.org/10.1109/wipdaeurope62087.2024.10797220
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21