A Short Circuit Testing and Ruggedness Study of Latest SiC MOSFETs

SiC power semiconductors offer high switching speed and high breakdown voltage which allows for increased system-level power density. Therefore, the use of SiC power semiconductors in the automotive and aerospace markets is increasing. However, the reliability of SiC devices is a key parameter responsible for the successful deployment in EV applications. SiC MOSFETs face various challenges when employed in power electronic converters, one of these challenges is the behaviour and protection during a short circuit event within a SiC power converter. An accurate desaturation methodology can be employed when short circuit withstand time (SCWT) and critical energy are known. This paper investigates the behaviour of the latest generation SiC TO-247 devices from two leading manufacturers in the SiC device market under short circuit type I conditions. The detailed design and parameter selection for the short circuit type I test are discussed along with presenting experimental results.