Steady-State Analysis of Standalone Vertical Silicon & SiC NPN BJTs

SiC BJTs have enabled a significant increase in the DC current gain compared with their Silicon counterparts. The absence of the gate oxide, as a known reliability concern in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$S$</tex>iC MOSFETs, has enabled high-gain <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$S$</tex>iC BJTs to find popularity in certain applications. This paper has investigated the temperature-dependance of vertical high voltage NPN Silicon and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$S$</tex>iC BJTs and sheds light on the similarities and differences in static analysis. Measurements are conducted on key electrical properties: Transfer characteristics, Base-Emitter leakage Cur-rent <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(I_{R(BE)})$</tex>, Collector-Emitter on-resistance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\boldsymbol{R}_{on})$</tex>, DC common-Emitter current gain <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\beta)$</tex> and Output (I-V) characteristics.