Three Different Designs of Integrated Gate Drivers in 650-V e-Mode GaN Power IC

This paper presents the main characteristics of three different gate drivers monolithically integrated and realized in 650-V GaN-on-Si p-GaN Schottky gate technology. It compares the proposed circuits with state-of-the-art solutions and explains the tradeoff between propagation delay and gate driver current consumption. One of the proposed gate drivers can switch a 650-V 100 mΩ power transistor in less than 3 ns of fall time with a static power consumption of 1.1 mA. Another proposed gate driver uses a simplified approach to obtain similar performance. A third one achieves almost similar performance while requiring only one power supply rail operating in bootstrap topology. High-voltage and high-frequency measurements are presented for both zero voltage switching (ZVS) and hard switching conditions.