High Current and Rectification in Wafer-Level Planar Nanoscale Air Channel Diodes With Heterogeneous Electrodes

In this study, we address the design and fabrication challenges typically encountered with planar nanoscale air channel diodes (NACDs) by introducing oblique deposition techniques, achieving the first-reported wafer-level planar NACDs with heterogeneous electrodes. By leveraging the work function difference from the heterogeneous electrodes and controlling the cathode-anode height difference as well as tilt angles, we provide a fresh perspective on device design. This approach results in a record output current of 2 mA at 5V for planar NACDs, an ultra-low turn-on voltage of 0.56 V as well as a high rectification ratio exceeding <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{4}}$ </tex-math></inline-formula>. This research offers a novel approach for realizing planar NACDs and paves the way for their integration into low-power, high-speed, high-frequency electronic applications.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2024-12-19
DOI
https://doi.org/10.1109/led.2024.3520300
Citations
3
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.93

Funders

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article

High Current and Rectification in Wafer-Level Planar Nanoscale Air Channel Diodes With Heterogeneous Electrodes

Feiliang Chen, Ruihan Huang, Jian Zhang, Wanying Tang et al.
3 citations
IEEE Electron Device Letters
GaN-based semiconductor devices and materials
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article

High Current and Rectification in Wafer-Level Planar Nanoscale Air Channel Diodes With Heterogeneous Electrodes

Feiliang Chen, Ruihan Huang, Jian Zhang, Wanying Tang, Haiquan Zhao, Mo Li, Xiangdong Wang, Lixin Sun, Wei Fan
article en
3 citations

Abstract

In this study, we address the design and fabrication challenges typically encountered with planar nanoscale air channel diodes (NACDs) by introducing oblique deposition techniques, achieving the first-reported wafer-level planar NACDs with heterogeneous electrodes. By leveraging the work function difference from the heterogeneous electrodes and controlling the cathode-anode height difference as well as tilt angles, we provide a fresh perspective on device design. This approach results in a record output current of 2 mA at 5V for planar NACDs, an ultra-low turn-on voltage of 0.56 V as well as a high rectification ratio exceeding <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{4}}$ </tex-math></inline-formula>. This research offers a novel approach for realizing planar NACDs and paves the way for their integration into low-power, high-speed, high-frequency electronic applications.

IEEE Electron Device LettersVol. 46(2)
University of Electronic Science and Technology of China (CN)
Foundation for Fundamental Research of China, Fundamental Research Funds for the Central Universities
Affordable and clean energy
Openalex Percentile: Top 25%
GaN-based semiconductor devices and materials
0.93
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