The Effect of Relative Humidity in Conductive Atomic Force Microscopy (Adv. Mater. 51/2024)
Conductive Atomic Force Microscopy In article number 2405932, Yue Yuan and Mario Lanza clarify what is the effect of relative humidity in conductive atomic force microscopy. They measure over 17,000 different locations on the surface of ten different samples (insulating, semiconducting and conducting) under seven different relative humidity levels. In insulators and thick (>5 nm) semiconductors, the water meniscus at the tip/sample junction increases the currents registered.
Authors
- Mario Lanza (ORCID: https://orcid.org/0000-0003-4756-8632)
- Yue Yuan (ORCID: https://orcid.org/0000-0002-7249-0411)
Institutions
- National University of Singapore (SG)
- King Abdullah University of Science and Technology (SA)
Publication Details
- Journal
- Advanced Materials
- Published
- 2024-12-01
- DOI
- https://doi.org/10.1002/adma.202470411
- Citations
- 1
- Primary Topic
- Force Microscopy Techniques and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.34