Intrinsic Localized Excitons in MoSe<sub>2</sub>/CrSBr Heterostructure

Despite extensive studies on magnetic proximity effects, the fundamental excitonic properties of the 2D semiconductor-magnet heterostructures remain elusive. Here, the presence of localized excitons in MoSe<sub>2</sub>/CrSBr heterostructures is unveiled, represented by a new photoluminescence emission feature, X<sup>*</sup>. Our findings reveal that X<sup>*</sup> originates from excitons confined by intrinsic defects in the CrSBr layer. Additionally, the degrees of valley polarization of the X<sup>*</sup> and trion peaks exhibit opposite polarities under a magnetic field and closely correlate with the magnetic order of CrSBr. This is attributed to spin-dependent charge transfer across the heterointerface, supported by density functional theory calculations which reveal a type-II band alignment. Furthermore, the strong in-plane anisotropy of CrSBr induces unique polarization-dependent responses in MoSe<sub>2</sub> emissions. This study highlights the crucial role of defects in shaping excitonic properties and offers valuable insights into spectrally resolved proximity effects in semiconductor-magnet van der Waals heterostructures.

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Publication Details

Journal
Advanced Materials
Published
2024-12-18
DOI
https://doi.org/10.1002/adma.202413438
Citations
7
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.82

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article

Intrinsic Localized Excitons in MoSe2/CrSBr Heterostructure

Pingfan Gu, Yuchen Gao, Zhigang Song, Takashi Taniguchi et al.
7 citations
Advanced Materials
2D Materials and Applications
0.82
article

Intrinsic Localized Excitons in MoSe2/CrSBr Heterostructure

Pingfan Gu, Yuchen Gao, Zhigang Song, Takashi Taniguchi, Kenji Watanabe, Xinyue Huang, Yu Ye, Zuxin Chen, Shiqi Yang
article en
7 citations

Abstract

Despite extensive studies on magnetic proximity effects, the fundamental excitonic properties of the 2D semiconductor-magnet heterostructures remain elusive. Here, the presence of localized excitons in MoSe<sub>2</sub>/CrSBr heterostructures is unveiled, represented by a new photoluminescence emission feature, X<sup>*</sup>. Our findings reveal that X<sup>*</sup> originates from excitons confined by intrinsic defects in the CrSBr layer. Additionally, the degrees of valley polarization of the X<sup>*</sup> and trion peaks exhibit opposite polarities under a magnetic field and closely correlate with the magnetic order of CrSBr. This is attributed to spin-dependent charge transfer across the heterointerface, supported by density functional theory calculations which reveal a type-II band alignment. Furthermore, the strong in-plane anisotropy of CrSBr induces unique polarization-dependent responses in MoSe<sub>2</sub> emissions. This study highlights the crucial role of defects in shaping excitonic properties and offers valuable insights into spectrally resolved proximity effects in semiconductor-magnet van der Waals heterostructures.

Advanced MaterialsVol. 37(6)
Harvard University (US), South China Normal University (CN), Peking University (CN), National Institute for Materials Science (JP), Shenyang Academy of Environmental Sciences (China) (CN), State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Liaoning Academy of Materials
Ministry of Education, Culture, Sports, Science and Technology, National Natural Science Foundation of China, China Postdoctoral Science Foundation, Natural Science Foundation of Beijing Municipality, Japan Society for the Promotion of Science, National Key Research and Development Program of China
Openalex Percentile: Top 25%
2D Materials and Applications
0.82
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