Multiple increases in the photosensitivity of an organic structure with double-distributed heterojunction

The process of creating a photosensitive structure with a double-distributed heterojunction based on a combination of fullerene and non-fullerene acceptors (PC71BM and ITIC-F) is described in this work. P3HT was used as the donor in both layers. The spectral photosensitivity response of the resulting FTO/P3HT:ITIC-F/P3HT:PC71BM/InGaSn structure covers a wide range of 470–980 nm. The peak photosensitivity of the structure reaches 40.98 mA/W, which is many times higher than the values for structures based on individual layers and a blend of all materials in one bulk heterojunction. The studies and measurements show that such a structure can be used in optics and electronics to detect radiation in the visible and near-IR ranges. In addition, the principle of creating a double-distributed heterojunction structure used in this study can be applied to other organic materials to obtain previously unattainable performance levels.