GROWTH OF SINGLE CRYSTALS, PHOTOELECTRIC PROPERTIES AND THE ABSORPTION EDGE OF A NEW LAYERED CuGa2.5In2.5S8 COMPOUND

In this article, the conditions for obtaining monocrystals of CuGa2.5In2.5S8, were investigated, their optical absorption edge, electrical and photoelectric properties. Using the criteria for the formation of new layered chalcogenides with octahedral and tetrahedral coordination of cations, it was hypothesized that due to the replacement of half of the In atoms in the CuIn5S8 spinel with Ga, which has a pronounced tendency to occupy the tetrahedral B sites in a denser packing of S atoms, a layered phase is formed. Melting of a stoichiometric mixture of Cu+2.5Ga+2.5In+8S led to the synthesis of a previously unknown single-phase product with a layered crystalline structure. Since copper, gallium, and indium sulfides are generally good photoconductors, it could be expected that the new compound would also exhibit high photosensitivity. The aim of this work was to investigate the conditions for obtaining of CuGa2.5In2.5S8 single crystals, their optical absorption edge, electrical and photoelectric properties.