Enhanced reliability of ferroelectric Hf_0.5Zr_0.5O₂ capacitors by bottom electrode surface oxidation

Abstract We demonstrate that ozone oxidation of the bottom TiN electrode surface in Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric capacitors enhances dielectric-breakdown (DB) lifetime and endurance. Time-dependent-dielectric-breakdown measurements and Weibull analysis reveal the crystalline states in HZO on the oxidized bottom electrode surface influence on DB lifetime. First-order reversal curve analysis shows uniform polarization reversal voltage with oxidation. Grazing incidence X-ray diffraction indicates significant changes in crystallographic orientation, while X-ray photoelectron emission spectroscopy reveals minimal changes in interfacial chemical bonding states. This ozone oxidation forms a chemically uniform interfacial layer on the bottom electrode, promoting out-of-plane aligned crystallization, thus mitigating weak breakdown points for DB and endurance fatigue.