Study of the photoluminescence properties as a function of the temperature of porous silicon layer obtained from an N-type substrate

This study focuses on how the photoluminescence properties of porous silicon (Psi) change with temperature and can provide detailed insights into the dynamics of carriers, defects, and surface interactions. In this work, porous layers are obtained using an electrochemical approach. Two known PL emission peaks were identified. The current work proposes two different nonradiative recombination processes based on the intensity development with the measurement temperature. The influence of surface conditions can be attributed to the thermal quenching behavior at low temperatures (10–60) K. Nevertheless, it is possible to attribute nonradiative recombination activities to thermal escape throughout the upper temperature (60–300) K. It is widely accepted that a comprehensive understanding of errors is of great benefit when considering their applications in optoelectronic devices.