A high-performance infrared photodetector based on GeTe films and In/Ag bimetallic electrodes
Photodetectors utilizing the annealed crystalline GeTe films were developed. This research demonstrates the feasibility of employing GeTe films for infrared detection.
Authors
- Liangcai Wu (ORCID: https://orcid.org/0000-0003-3734-8417)
- Jing‐Yuan Wu (ORCID: https://orcid.org/0000-0001-8271-301X)
- Chunrui Wang (ORCID: https://orcid.org/0000-0001-5682-9529)
- Kaibing Xu (ORCID: https://orcid.org/0000-0003-4421-277X)
- Yi Gu (ORCID: https://orcid.org/0000-0003-2516-168X)
- Bingbing Zhang (ORCID: https://orcid.org/0000-0002-1334-5812)
- Xin Zhou (ORCID: https://orcid.org/0000-0002-1820-4445)
- Xiaolin Liu (ORCID: https://orcid.org/0009-0004-5440-5908)
Institutions
- Donghua University (CN)
- Chinese Academy of Sciences (CN)
- State Key Laboratory of Transducer Technology (CN)
- Shanghai Institute of Technical Physics (CN)
- Shanghai Institute of Microsystem and Information Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2024-12-19
- DOI
- https://doi.org/10.1039/d4tc04381b
- Primary Topic
- Phase-change materials and chalcogenides
- Type
- article
- Field-Weighted Citation Impact
- 0.00