High‐Yield Production of High‐κ/Metal Gate Nanopattern Array for 2D Devices via Oxidation‐Assisted Etching Approach (Small 51/2024)
Nanopattern Arrays High-performance high-?/metal gate (HKMG) structures are crucial for advanced electronics. In article number 2403187, Ziao Tian, Zengfeng Di, and co-workers introduce an innovative oxidation-assisted etching method for large-scale, high-yield HKMG arrays with 150 nm resolution. By controlling aluminum to alumina transition on 2D materials, a process compatible with existing semiconductor techniques is achieved, promising for VLSI circuit applications and nanoelectronics advancement.
Authors
- Jiejun Zhang (ORCID: https://orcid.org/0000-0002-4137-870X)
- Ziao Tian (ORCID: https://orcid.org/0000-0001-8342-1502)
- Daobing Zeng (ORCID: https://orcid.org/0000-0001-9675-5659)
- Zengfeng Di (ORCID: https://orcid.org/0000-0002-9357-5107)
- Weida Hong
- Zhongying Xue (ORCID: https://orcid.org/0000-0003-2898-1472)
- Miao Zhang (ORCID: https://orcid.org/0000-0003-3582-6075)
- Chen Wang (ORCID: https://orcid.org/0009-0003-2924-3399)
Institutions
- Chinese Academy of Sciences (CN)
- Shanghai Institute of Microsystem and Information Technology (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Small
- Published
- 2024-12-01
- DOI
- https://doi.org/10.1002/smll.202470378
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00