Self-powered, flexible near-infrared photodetector with high responsivity and strain robustness via stacking-engineered interfacial polarization of a BAs homobilayer

Two-dimensional photodetectors have become the preferred choice for future photodetectors with their advantages of being lightweight, portable, and high performance. However, the intrinsic properties of two-dimensional semiconductors make them susceptible to external disturbances, rendering them unsuitable for complex usage scenarios. Additionally, the power supply issue of small-scale devices relies on traditional van der Waals heterostructures with type-II band alignment for self-powering. Nonetheless, lattice and momentum mismatch issues for heterostructures have consistently hindered design efforts. Through first-principle calculations and quantum transport simulations, we introduce a groundbreaking self-powered near-infrared (NIR) photodetector based on 2D homobilayer BAs, achieved through tailored stacking techniques that induce spontaneous electrical polarization. The resulting ab-stacked BAs/BAs vdW homostructure forms a robust p-n homojunction endowed with a potent built-in polarization electric field, courtesy of the inherent spontaneous polarization along the out-of-plane direction. Leveraging broad momentum-space compatibility, high carrier mobility, and robust NIR light absorption, our 2D homobilayer BAs photodetector exhibits a wide NIR response range (780 nm--1600 nm) and an impressive responsivity of 122 mA/W even at zero bias. Under varying strains, homostructures of bilayer BAs exhibit remarkable robustness, maintaining a direct band gap and type-II band alignment across the entire strain spectrum. Moreover, under compressive strain, notable enhancements are observed in optical absorption coefficient and responsivity. Notably, the polarization induced by the ab-stacked interface is tunable, with polarization intensity increasing with the number of interfaces, presenting a straightforward method to amplify system polarization. Our study delineates a viable strategy for developing high-performance self-powered NIR photodetectors through strategic stacking engineering.

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Publication Details

Journal
Physical Review Applied
Published
2024-12-19
DOI
https://doi.org/10.1103/physrevapplied.22.064075
Citations
4
Primary Topic
Advanced Sensor and Energy Harvesting Materials
Type
article
Field-Weighted Citation Impact
0.74

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article

Self-powered, flexible near-infrared photodetector with high responsivity and strain robustness via stacking-engineered interfacial polarization of a BAs homobilayer

Peng Chao Kang, Junfeng Yan, Zhiyong Zhang, Linwei Yao et al.
4 citations
Physical Review Applied
Advanced Sensor and Energy Harvesting Materials
0.74
article

Self-powered, flexible near-infrared photodetector with high responsivity and strain robustness via stacking-engineered interfacial polarization of a BAs homobilayer

Peng Chao Kang, Junfeng Yan, Zhiyong Zhang, Linwei Yao, Yuchen Li, Lin Zhang, Wu Zhao, Hongyuan Zhao, Jiangni Yun
article en
4 citations

Abstract

Two-dimensional photodetectors have become the preferred choice for future photodetectors with their advantages of being lightweight, portable, and high performance. However, the intrinsic properties of two-dimensional semiconductors make them susceptible to external disturbances, rendering them unsuitable for complex usage scenarios. Additionally, the power supply issue of small-scale devices relies on traditional van der Waals heterostructures with type-II band alignment for self-powering. Nonetheless, lattice and momentum mismatch issues for heterostructures have consistently hindered design efforts. Through first-principle calculations and quantum transport simulations, we introduce a groundbreaking self-powered near-infrared (NIR) photodetector based on 2D homobilayer BAs, achieved through tailored stacking techniques that induce spontaneous electrical polarization. The resulting ab-stacked BAs/BAs vdW homostructure forms a robust p-n homojunction endowed with a potent built-in polarization electric field, courtesy of the inherent spontaneous polarization along the out-of-plane direction. Leveraging broad momentum-space compatibility, high carrier mobility, and robust NIR light absorption, our 2D homobilayer BAs photodetector exhibits a wide NIR response range (780 nm--1600 nm) and an impressive responsivity of 122 mA/W even at zero bias. Under varying strains, homostructures of bilayer BAs exhibit remarkable robustness, maintaining a direct band gap and type-II band alignment across the entire strain spectrum. Moreover, under compressive strain, notable enhancements are observed in optical absorption coefficient and responsivity. Notably, the polarization induced by the ab-stacked interface is tunable, with polarization intensity increasing with the number of interfaces, presenting a straightforward method to amplify system polarization. Our study delineates a viable strategy for developing high-performance self-powered NIR photodetectors through strategic stacking engineering.

Physical Review AppliedVol. 22(6)
McGill University (CA), Beihang University (CN)
National Natural Science Foundation of China, International Science and Technology Cooperation Program of Shanxi Province
Affordable and clean energy
Openalex Percentile: Top 31%
Advanced Sensor and Energy Harvesting Materials
0.74
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