Site-Controlled Growth of InGaAs Quantum Dots Based on Buried Stressors for the Development of Microlasers and Quantum Light Sources

Abstract Many applications of InGaAs quantum dots in various fields of photonics, including optoelectronics, quantum technologies, and telecommunications have emerged in recent years. The objective of this work is to evaluate and optimize the growth and fabrication parameters of site-controlled InGaAs quantum dots, grown with the buried stressor method. The aim is to enhance the precision, uniformity and reproducibility of the quantum dot placement and local density for advanced optoelectronic applications, such as low-treshold microlasers and quantum light sources. The influence of the growth and the fabrication processes on the structural and optical properties of site-controlled quantum dots is investigated in depth using cathodoluminescence mapping, scanning electron microscopy, confocal laser scanning microscopy, and photoluminescence spectroscopy.