Free electron mobility limited by fixed charges and trapped electrons in 4H-SiC(11 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mover> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> </mml:math> 0) and (1 <mml:math xmlns:mml="htt

Abstract The impact of Coulomb scattering by fixed charges and trapped electrons on the free electron mobility ( μ free ) of SiC(11 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mn>2</mml:mn> <mml:mo accent="true">¯</mml:mo> </mml:mover> </mml:math> 0) and (1 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mn>1</mml:mn> <mml:mo accent="true">¯</mml:mo> </mml:mover> </mml:math> 00) MOSFETs annealed in NO was quantitatively discussed through numerical calculations. The fixed charge density for MOSFETs on (11 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mn>2</mml:mn> <mml:mo accent="true">¯</mml:mo> </mml:mover> </mml:math> 0) and (1 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mn>1</mml:mn> <mml:mo accent="true">¯</mml:mo> </mml:mover> </mml:math> 00) annealed in NO was estimated to be 1.0 × 10 13 cm −2 , which is four times higher than that for (0001) MOSFETs previously reported. Calculation of μ free can well reproduce the experimental Hall mobilities for all MOSFETs on (11 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mn>2</mml:mn> <mml:mo accent="true">¯</mml:mo> </mml:mover> </mml:math> 0) and (1 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mn>1</mml:mn> <mml:mo accent="true">¯</mml:mo> </mml:mover> </mml:math> 00) within the wide range of effective normal field (0.08 MV cm −1 ≤ E eff ≤ 0.78 MV cm −1 ).