The DC and trapping analysis of Fe-doping tail effects on the GaN-based HEMTs

In this work, a systematic study and comparison of the DC and trap effects of three different Fe doping tail in AlGaN/GaN high electron mobility transistors were conducted. Firstly, transfer, output, and breakdown characteristic measurements were performed on the three samples, and the reasons for the differences in these characteristics were compared and analyzed. Subsequently, based on Pulse IV and Transient Current measurements, we identified the trap locations, trap energy levels, and trap types. We compared and analyzed the impact of different Fe-doped buffer layer thicknesses, source-drain spacings, and gate widths on the sample trap density. These results are highly meaningful for the design of GaN HEMT buffer layers.