Design of junction temperature measurement system for SiC MOSFET based on gate peak current

The on-line monitoring of SiC MOSFET junction temperature holds significant importance in enhancing the reliability and lifespan of power electronic devices. In this study, a peak gate current-based online acquisition system for measuring the junction temperature of SiC MOSFET is designed. Firstly, the measuring principle of peak gate current is explained based on the SiC MOSFET and its driving equivalent circuit. Subsequently, an online acquisition system for measuring the peak gate current of SiC MOSFET is developed. Finally, an experimental verification platform is established to validate the functionality of the designed junction temperature online acquisition system. The results demonstrate that the proposed SiC MOSFET online junction temperature measurement system largely fulfills all requirements with an accuracy level below 9%.