A fast recovery diode with local defects in the anode

This paper proposes a fast recovery diode with local anode defects (LAD) and conducts simulation verification analysis using Sentaurus TCAD. Based on a 650V epitaxial fast recovery diode, the conduction voltageVFtemperature coefficient of the device can be adjusted by introducing suitable local defects into its anode. At the same time, the vertical carrier distribution of the proposed device can be effectively optimized to further reduce the carrier (hole) concentration near the PN junction, thereby improving the reverse recovery performance of the device (such as reverse recovery peak currentIRRMand reverse recovery chargeQRR). The simulation results show that compared with the conventional FRD, the proposed device in this paper improves its temperature coefficientΔVF_300K~425K from -0.56 mV/K of traditional devices to 0.16 mV/K under slightly increased leakage, and the reverse recovery peak current and reverse recovery charge reduce by 30.0% and 34.8%, respectively.