Iron-irradiated methylammonium lead iodide bromide (MAPbI2Br) thin films with enhanced optical and electrical properties for high-efficiency perovskite solar cells

In the pursuit of enhancing the optoelectronic properties of perovskite thin films for photovoltaic applications, this study investigates the effects of Fe ion irradiation on methylammonium lead iodide bromide (MAPbI₂Br) thin films. Thin films of methylammonium lead iodide bromide, (CH3NH3PbI2Br, or MAPbI2Br) have been deposited by sol–gel dip coating technique. These films were irradiated with 300 keV Fe ions with flouncy of 2 × 1014 ions/cm2. The prepared films all show the cubic crystal structure. However, the film irradiated with Fe ions has a larger grain size, according to XRD. The optical characteristics, such as refractive index, band gap energy, and extinction coefficients, are examined by UV–Vis analysis. Although both the films showed a direct bandgap, the film irradiated with Fe ions showed a lower value for the bandgap energy (1.76 eV) and high refractive index. The device structure used was FTO/TiO2/MAPbI2Br/spiro-OMeTAD/Au. The devices made with 300 keV Fe ions irradiated film has high current density of 10.86 mA cm−2, fill factor of 0.80, an open circuit voltage of 1.06 V, and an efficiency of 9.93%. The findings emphasize the potential of Fe ion irradiation as a novel technique to improve grain structure and optoelectronic properties, advancing perovskite-based device technology for higher efficiency solar cells.