Electronic Delocalization Engineering of β‐AsP Enabled High‐Efficient Multisource Logic Nanodevices (Adv. Funct. Mater. 41/2024)
Multisource Logic Nanodevices In article number 2312830, Jian Wang, Sicong Zhu, Jian Wu, and co-workers report electron delocalization engineering on 2D β-AsP-based materials through constructing trace vacancies and doping sites, improving the physicochemical properties. In particular, extremely high-performance multi-source logic devices (optically driven, electrically driven, and thermally driven) are created through further accurate tuning of electron delocalization.
Authors
- Pengwei Gong
- Jingxian Xiong
- Jian Wu (ORCID: https://orcid.org/0000-0003-3747-7358)
- Hongzhen Lin (ORCID: https://orcid.org/0000-0001-8764-1246)
- Fangqi Liu (ORCID: https://orcid.org/0000-0001-9699-4713)
- Sicong Zhu (ORCID: https://orcid.org/0000-0003-2103-3998)
- Tongtong Wang (ORCID: https://orcid.org/0000-0001-5189-951X)
- Qiang Yu (ORCID: https://orcid.org/0009-0009-8474-8510)
- Jian Wang (ORCID: https://orcid.org/0000-0002-7945-0826)
- Zixin Yang (ORCID: https://orcid.org/0009-0007-8467-1715)
- Xiaolin Zhang (ORCID: https://orcid.org/0000-0003-4909-7790)
Institutions
- Tongji University (CN)
- National University of Singapore (SG)
- National University of Defense Technology (CN)
- Chinese Academy of Sciences (CN)
- Wuhan University (CN)
- Suzhou Institute of Nano-tech and Nano-bionics (CN)
- Helmholtz-Institute Ulm (DE)
- Wuhan University of Science and Technology (CN)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2024-10-01
- DOI
- https://doi.org/10.1002/adfm.202470238
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21