Selectively Suppressed Double Channel Electronic Transport in the Sm Doping Semiconductor Layer Oxide Bi₂O₂Se

Great efforts recently have advanced the investigation of the high-mobility two-dimensional semiconductor Bi2O2Se toward its device applications, which arouses more questions to clarify the intriguing charge behaviors of Bi2O2Se. The present work introduced Sm atoms to partially substitute the Bi atoms for modulating the properties of the supposed conduction Bi2O2 layer. A conduction behavior with double transport channels was then discovered, one of which was significantly suppressed by the Sm doping, but another one was exempt. Such a selective suppression in channel mobility brought forward a transition from metallic-type conduction to semiconductor-type conduction, which simultaneously gave rise to an obvious weak localization and antilocalization effect in the samples. This study provides more experimental insights into the interesting charge transport properties of Bi2O2Se and suggests a route to modify it.