Design and Analysis of Active Inductor for 5G Applications

Industries in the electronics and communication sector are constantly pushing for increased device functionality. For researchers working in this field tuneability and compactness have become the critical parameter. In this study, a gyrator based Active Inductor (AI) for wide tuning range has been proposed. The design of proposed AI is based on differential configuration which can also provide high-Quality Factor (QF). By utilizing feedback coupled transconductors, the noise performance of the active inductors is improved without compromising its quality factor or increasing power consumption. Due to its strong transconductance, the differential design of the proposed AI lowers series resistance and boosts overall inductance. The proposed AI is deigned using 28 nm CMOS technology for mmWave frequency band ranging from 23–27 GHz and having the inductance of 15 nH. At a 1 V supply, it consumes 28 m W of power.

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Publication Details

Published
2024-09-23
DOI
https://doi.org/10.1109/iscit63075.2024.10793686
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
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article

Design and Analysis of Active Inductor for 5G Applications

Sunanda Ambulker, R Sathya
Radio Frequency Integrated Circuit Design
article

Design and Analysis of Active Inductor for 5G Applications

Sunanda Ambulker, R Sathya
article en

Abstract

Industries in the electronics and communication sector are constantly pushing for increased device functionality. For researchers working in this field tuneability and compactness have become the critical parameter. In this study, a gyrator based Active Inductor (AI) for wide tuning range has been proposed. The design of proposed AI is based on differential configuration which can also provide high-Quality Factor (QF). By utilizing feedback coupled transconductors, the noise performance of the active inductors is improved without compromising its quality factor or increasing power consumption. Due to its strong transconductance, the differential design of the proposed AI lowers series resistance and boosts overall inductance. The proposed AI is deigned using 28 nm CMOS technology for mmWave frequency band ranging from 23–27 GHz and having the inductance of 15 nH. At a 1 V supply, it consumes 28 m W of power.

Affordable and clean energy
Openalex Percentile: Top 79%
Radio Frequency Integrated Circuit Design
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