A High Power-handling Laterally-excited Bulk Acoustic Resonator with Scattering Vias in Double-layer Electrodes over +35 dBm

In this paper, we proposed a laterally excited bulk acoustic resonator with scattering vias in double-layer electrodes (Mo/Au), SV-BAR. The SV-BAR is fabricated using a 358 nm Z-cut lithium niobate (LiNbO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>) on an insulator (LNOI) substrate. The Au layer of IDTs in SV-BAR is patterned by the lift-off process compatible with the backside-release process. The SV-BAR features a relatively clean spectral response, and a high power-handling capability greater than +35.08 dBm at 5.189 GHz with a large ${K_t}^2$ of 25.29%, compared with the conventional XBAR (+24.76 dBm). Finally, in high-power environments, the SV-BAR has slight deformation of thin films and the electrode ablation in the IDTs edge (Mo layer), while the conventional XBAR is subject to film rupture and electrode burnout. The SV-BAR exhibits remarkable power-handling capacity over 5 GHz, showing its great potential for high-performance 5G/6G filters.