SAW Filter Technology on POI for Sensor Applications
Pieozelectric-On-Insulator (POI) wafers are representing the new generation of engineered substrates for the development of advanced SAW devices. These materials combining single crystal sub-micron layers and Silicon substrates allow for the design of frequency filters with minimum insertion losses, coupling factor in the range 7-11% and quality factor times frequency Q×f products equal to or in excess of 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> Hz. Although quite obvious for filter applications, the advantages of SAW-on-POI did not find yet a supported interest for sensing applications. In this paper, we are showing some examples of the use of SAW-on-POI for sensor development. We particularly show how it is possible to develop temperature or stress differential sensors with only one device upon specific design and selected operation conditions.
Authors
- Gabrielle Aspar
- Tony Makdissy (ORCID: https://orcid.org/0009-0002-9004-7736)
- Roland Salut (ORCID: https://orcid.org/0000-0002-0881-7395)
- Alexandre Raveski
- P. Achatz
- Thomas Baron
- Thierry Laroche
- W. Daniau
- E. Courjon
- Sylvain Ballandras
- Julien Garcia
- Saly Ndiaye
Institutions
- Soitec (France) (FR)
- Centre National de la Recherche Scientifique (FR)
- Franche-Comté Électronique Mécanique Thermique et Optique - Sciences et Technologies (FR)
- École Nationale Supérieure de Mécanique et des Microtechniques (FR)
Publication Details
- Published
- 2024-09-22
- DOI
- https://doi.org/10.1109/uffc-js60046.2024.10794086
- Primary Topic
- Acoustic Wave Resonator Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00