Effect of Quenching on dielectric and ferroelectric properties of Sm³⁺ doped BiFeO₃-BaTiO₃ solid solution

Lead-free BiFeO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>-BaTiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> (BF-BT) has raised a lot of concerns for being a eco – friendly ferroelectric ceramic with high Curie temperature. But, large concentration of defect ions and high dielectric loss tanδ result from the volatilization of bismuth and valence change of Fe<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup> during the sintering limits its application. This work examined the superior performance of Sm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup> doped 0.67BF-0.33BT using both air and water quenching techniques. Lead-free 0.67BiFeO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>-0.33Ba<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.99</inf>Sm<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.01</inf>TiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> (BF-BST) ceramic powders were prepared using the solid-state reaction method. Ather the sintering processes the samples were cooled using the air quenching and water quenching methods. X-Ray diffraction results show that prepared samples exhibit a pure perovskite structure, with no impurity phases detected. High remanent polarization (P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</inf>) of approximately 14.2 µC/c<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, dielectric loss stability up to 500°C, and a Curie temperature (TC) of about 585°C were observed. These properties suggest that this composition is a capable for high-temperature dielectric and ferroelectric device applications.