Study on Supercritical Fluid Technique for Application in Nonvolatile Resistive Random Access Memory (RRAM) Device Using SBT Ferroelectric Thin Films

In recent years, the resistive random access memory (RRAM) device was attracted great attention. The RRAM device was composed of the metal/insulation layer/metal (MIM) structure. Because of its simple structure, it was considered to potential in the development of the future generations of non-volatile memory device. Recently, it was found that transition metal oxides and rare earth elements as insulating layer materials showed the excellent resistance switching characteristics and be used in non-volatile memories devices. This study described the ferroelectric oxide thin film as the insulating layer in non-volatile memory devices for rapid annealing and low-temperature supercritical fluid treatment to measure its electrical, bipolar resistive switching and ferroelectric properties and the differences in electrical conduction mechanisms.