Residual Stress Analysis in ScAlN Micro-Diaphragm for High Sensitivity and Wide Range Pressure Sensing
Compared to conventional Lead Zirconate Titanate (PZT) micro-diaphragm, Scandium Aluminum Nitride (ScAlN) micro-diaphragm’s inherent piezoelectricity and absence of obvious ferroelectric hysteresis render it an optimal choice for resonance sensing. Given the flexibility of a thin elastic membrane, ScAlN micro-diaphragm can potentially be highly sensitive for pressure sensing. However, it is found that the micro-diaphragm with tensile residual stress impact will not work as expected at a low-pressure range (0-0.5 bar). The resonance characteristic of the micro-diaphragm is severely affected by the initial condition and residual stress. To address this challenge, we have investigated the impact of residual stress and initial membrane deformation and propose a desirable membrane condition. Eventually, we achieve a high-sensitivity (f<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Sen</inf> = 112 kHz/bar, FOM = f<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Sen</inf>/f<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</inf> = 98×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> ppm/bar) and a wide range (0-3 bar) Sc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf>.<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</inf>Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf>.<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">85</inf>N micro-diaphragm pressure sensor well-suited for tire pressure monitoring in vehicles.
Authors
- Alberto Leotti
- David Choong Sze Wai
- Carla Lazzari
- Huamao Lin (ORCID: https://orcid.org/0000-0002-4968-3872)
- Gang Jian (ORCID: https://orcid.org/0000-0002-7236-3113)
- Jihang Liu (ORCID: https://orcid.org/0000-0002-6690-8711)
- Peter Chang Hyun Kee
- Filippo D’Ercoli
- Daniel Ssu-Han Chen (ORCID: https://orcid.org/0000-0003-0806-9638)
- Riccardo Tacchini
- Yul Koh
- Zhang Qing Xin
- Srinivas Merugu
- Domenico Giusti
Institutions
- Agency for Science, Technology and Research (SG)
- Institute of Microelectronics (SG)
- STMicroelectronics (Singapore) (SG)
- STMicroelectronics (Italy) (IT)
Publication Details
- Published
- 2024-09-22
- DOI
- https://doi.org/10.1109/uffc-js60046.2024.10793493
- Citations
- 6
- Primary Topic
- Metal and Thin Film Mechanics
- Type
- article
- Field-Weighted Citation Impact
- 1.62