Low-Vacuum Sensing With Silicon-On-Nothing Resonating Membrane

This paper presents a novel piezoelectric over silicon-on-nothing (PSON) membrane resonator for highly sensitive low-vacuum detection. Conventional piezoresistive sensors, primarily designed for positive pressure sensing, face limitations in vacuum applications due to assembly-induced stress, temperature variations, and outgassing errors. The proposed device addresses these challenges by integrating a piezoelectric Sc-doped AlN film on a silicon membrane suspended over a vacuum cavity. The frequency response of the membrane was characterized across a pressure range from atmospheric pressure down to 69.35 mbar, under varying DC bias conditions. Results show that applying a -40 V DC bias enhances sensitivity, with a frequency shift of -61 Hz/mbar (-64.1 ppm/mbar), due to increased membrane compressive relaxation. This PSON-based sensor demonstrates superior accuracy, miniaturization potential, and robustness for low-vacuum applications, making it a promising alternative for industries such as semiconductor manufacturing, aviation, and medical devices.

Authors

Institutions

Publication Details

Published
2024-09-22
DOI
https://doi.org/10.1109/uffc-js60046.2024.10794055
Citations
1
Primary Topic
Analytical Chemistry and Sensors
Type
article
Field-Weighted Citation Impact
0.29
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Low-Vacuum Sensing With Silicon-On-Nothing Resonating Membrane

Sagnik Ghosh, Jihang Liu, David Sze Wai Choong, Duan Jian Goh et al.
1 citations
Analytical Chemistry and Sensors
0.29
article

Low-Vacuum Sensing With Silicon-On-Nothing Resonating Membrane

Sagnik Ghosh, Jihang Liu, David Sze Wai Choong, Duan Jian Goh, Daniel Ssu-Han Chen, Jaibir Sharma, Yul Koh
article en
1 citations

Abstract

This paper presents a novel piezoelectric over silicon-on-nothing (PSON) membrane resonator for highly sensitive low-vacuum detection. Conventional piezoresistive sensors, primarily designed for positive pressure sensing, face limitations in vacuum applications due to assembly-induced stress, temperature variations, and outgassing errors. The proposed device addresses these challenges by integrating a piezoelectric Sc-doped AlN film on a silicon membrane suspended over a vacuum cavity. The frequency response of the membrane was characterized across a pressure range from atmospheric pressure down to 69.35 mbar, under varying DC bias conditions. Results show that applying a -40 V DC bias enhances sensitivity, with a frequency shift of -61 Hz/mbar (-64.1 ppm/mbar), due to increased membrane compressive relaxation. This PSON-based sensor demonstrates superior accuracy, miniaturization potential, and robustness for low-vacuum applications, making it a promising alternative for industries such as semiconductor manufacturing, aviation, and medical devices.

Agency for Science, Technology and Research (SG), Institute of Microelectronics (SG)
Affordable and clean energy
Openalex Percentile: Top 44%
Analytical Chemistry and Sensors
0.29
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.