Low-Vacuum Sensing With Silicon-On-Nothing Resonating Membrane
This paper presents a novel piezoelectric over silicon-on-nothing (PSON) membrane resonator for highly sensitive low-vacuum detection. Conventional piezoresistive sensors, primarily designed for positive pressure sensing, face limitations in vacuum applications due to assembly-induced stress, temperature variations, and outgassing errors. The proposed device addresses these challenges by integrating a piezoelectric Sc-doped AlN film on a silicon membrane suspended over a vacuum cavity. The frequency response of the membrane was characterized across a pressure range from atmospheric pressure down to 69.35 mbar, under varying DC bias conditions. Results show that applying a -40 V DC bias enhances sensitivity, with a frequency shift of -61 Hz/mbar (-64.1 ppm/mbar), due to increased membrane compressive relaxation. This PSON-based sensor demonstrates superior accuracy, miniaturization potential, and robustness for low-vacuum applications, making it a promising alternative for industries such as semiconductor manufacturing, aviation, and medical devices.
Authors
- Sagnik Ghosh (ORCID: https://orcid.org/0000-0002-5540-7823)
- Jihang Liu (ORCID: https://orcid.org/0000-0002-6690-8711)
- David Sze Wai Choong
- Duan Jian Goh
- Daniel Ssu-Han Chen (ORCID: https://orcid.org/0000-0003-0806-9638)
- Jaibir Sharma (ORCID: https://orcid.org/0000-0001-5166-0015)
- Yul Koh
Institutions
- Agency for Science, Technology and Research (SG)
- Institute of Microelectronics (SG)
Publication Details
- Published
- 2024-09-22
- DOI
- https://doi.org/10.1109/uffc-js60046.2024.10794055
- Citations
- 1
- Primary Topic
- Analytical Chemistry and Sensors
- Type
- article
- Field-Weighted Citation Impact
- 0.29