Fabrication and Electrical Characterization of Photoelectrochemical Solar Cell of n-CdS-p-Cu₂S Electrode

This paper presents fabrication and characterization of p-type Cu2s and n-type CdS semiconductor electrodes for photo-electrochemical solar cell applications. The n-type cadmium sulphide was deposited on glass substrate by chemical bath deposition process at a temperature of 75°C for 2hours. The chemical bath consisted of Cadmium Chloride, Potassium Hydroxide, Ammonium Nitrate and Thiourea with concentration of 0.02M, 0.5M, 1.5M, and 0.2M respectively. The p-type copper (II) sulphide was formed on the CdS layer using a solution consisting of copper chloride. The values obtained for photovoltaic parameters of the photo-electrochemical cell are the short-circuit current (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</inf>) 0.56mA, open-circuit voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</inf>) 0.615V, fill factor (FF) 0.61 and efficiency (q) 0.14%.