In Quest of Temperature-Dependent Ferroelectric Switching in 50 nm Al_0.7Sc_0.3N Thin Film

In this paper, temperature- dependent (- 40 °C to 200 °C) ferroelectric switching is studied in 50 nm scandium-doped aluminum nitride (Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf>Sc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf>N) film with in-situ temperature-dependent X-ray diffraction (XRD) results. With increasing temperature from - 40 °C to 200 °C, remnant polarization (|Pr|) remains stable and varies by ~ 19 % between 111 − 90 µC/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. While the coercive field (|EC|) drops by ~ 40 % in the same temperature range, indicating reduction of activation barrier due to high thermal energy contribution at higher temperature. Non-switching leakage current increases monotonously with increasing temperature in our Mo/Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf>Sc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf>N/Mo metal-ferroelectric-metal (MFM) capacitor. Charge transport mechanism is explored in the ferroelectric film by linear curve fitting method.