Wafer level Demonstration and Characterization of c-Axis Oriented Sc<sub>0.3</sub>Al<sub>0.7</sub>N Bilayer Stacks
In this study, we investigated c-axis oriented single-layer and bilayer stack of Sc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf>Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf>N films, focusing on the film microstructures and piezoelectric properties across various piezoelectric film layer thicknesses. Mo thickness of 2 kÅ was used as the bottom, middle and top electrode layers. Various film stacks with Sc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf>Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf>N layer thickness of 1 kÅ, 3 kÅ, 5 kÅ, 7.5 kÅ and 10 kÅ were deposited and characterized. With Sc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf>Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf>N thickness varying from 1 kÅ to 10 kÅ, the film texture, (measured from XRD rocking curve FWHM), improved from 2° to 1.3°, the effective piezoelectric coefficients, d<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">33,f</inf> increased from 9.5 pm/V to 11.3 pm/V, e<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">31,f</inf> changed from -1.76 C/m<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> to -2.09 C/m<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. Comparable or even better ScAlN (0002) orientation can be achieved for the bilayer film stacks. The effective piezoelectric coefficient difference between the first and second Sc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf>Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf>N layers is less than 3%.
Authors
- Dao Hao Sim
- Alberto Leotti
- A. K. Das (ORCID: https://orcid.org/0000-0001-8900-0725)
- Yao Zhu (ORCID: https://orcid.org/0000-0002-1582-0816)
- Tak‐Sing Wong (ORCID: https://orcid.org/0000-0001-5500-0575)
- Naadaa Zakiyyan (ORCID: https://orcid.org/0000-0003-0291-8424)
- Binni Varghese (ORCID: https://orcid.org/0000-0002-8229-6313)
- Peng Fei Liu (ORCID: https://orcid.org/0000-0003-0411-0488)
- Peter Hyun Kee Chang
- Qing Xin Zhang
- Daniel Ssu-Han Chen (ORCID: https://orcid.org/0000-0003-0806-9638)
- Goutham Koppisetti
- Minghua Li (ORCID: https://orcid.org/0000-0002-7857-6670)
- Hong Yan (ORCID: https://orcid.org/0000-0002-9550-8311)
- Huamao Lin
- Yee Lung Lee
- Yat Fung Tsang
Institutions
- Agency for Science, Technology and Research (SG)
- Institute of Microelectronics (SG)
- STMicroelectronics (Singapore) (SG)
Publication Details
- Published
- 2024-09-22
- DOI
- https://doi.org/10.1109/uffc-js60046.2024.10793771
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Science and Engineering Research Council