Filter performances for 5G bands based on SCAW design on POI

A previous work was introducing a filter structure based on the combination of coupling and resonating regions located in a cavity between two Interdigitated transducers (IDTs). This approach allows for the design of frequency filters on Piezoelectric-On-Insulator (POI) wafers with limited insertion losses and sharp transition bands on each side of the filter pass-band. This new filter architecture called SCAW for Surface Cavity Acoustic Wave filters is a mimic of what is achieved in Electromagnetic cavity filters. The objective of the present contribution is to demonstrate the capability of the proposed approach to address Long Term Evolution (LTE) and 5G bands. We have investigated the applicability of the SCAW concept to address various frequency bands used for telecommunication to illustrate the interest of this emerging design approach. Typical bands are selected, designed and manufactured with bandwidths and frequencies respectively ranging from 0.5 to 6% from 900 MHz to 2.3 GHz. Design results including electromagnetic-acoustic co-simulation are reported and compared with experimental measurements of devices built on standard POI substrates.