Characterization of AlN and AlScN thin films CPW Transmission on High-Resistive Substrates

This article describes a coplanar waveguide (CPW) with a stacked structure of metal, piezoelectric thin film, and high resistance substrate, which can be used for on-chip interconnection of piezoelectric acoustic devices. The performance of CPW on AlN and AlScN platforms is influenced by the effective dielectric constant and parasitic conductivity of the substrate. There is no parasitic conductivity at the interface between AlScN and Si, so etching will cause a decrease in the effective dielectric constant. The performance of AlN CPW has significant losses due to parasitic conductivity effects. By etching, AlN-CPW removes parasitic conductivity effects and the transmission loss can increase from -0.4 dB/mm to -0.3 dB/mm.

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Published
2024-09-22
DOI
https://doi.org/10.1109/uffc-js60046.2024.10793661
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Characterization of AlN and AlScN thin films CPW Transmission on High-Resistive Substrates

Xuankai Xu, Kang Du, Fengyu Liu, Tao Wu
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GaN-based semiconductor devices and materials
article

Characterization of AlN and AlScN thin films CPW Transmission on High-Resistive Substrates

Xuankai Xu, Kang Du, Fengyu Liu, Tao Wu
article en

Abstract

This article describes a coplanar waveguide (CPW) with a stacked structure of metal, piezoelectric thin film, and high resistance substrate, which can be used for on-chip interconnection of piezoelectric acoustic devices. The performance of CPW on AlN and AlScN platforms is influenced by the effective dielectric constant and parasitic conductivity of the substrate. There is no parasitic conductivity at the interface between AlScN and Si, so etching will cause a decrease in the effective dielectric constant. The performance of AlN CPW has significant losses due to parasitic conductivity effects. By etching, AlN-CPW removes parasitic conductivity effects and the transmission loss can increase from -0.4 dB/mm to -0.3 dB/mm.

ShanghaiTech University (CN)
Natural Science Foundation of Shanghai, Research and Development
Openalex Percentile: Top 86%
GaN-based semiconductor devices and materials
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