The Mechanism of an Etching-Back to Reduce the Density of Cone Defect in STI During the Manufacturing
The formation of cone defects is a side effect of the shallow trench isolation (STI) etching process, caused by the redeposition of residue from silicon nitride, silicon dioxide, or byproducts from the etching process. This study aims to explain the mechanism responsible for these defects during STI etching. The utilization of this model can enhance the design for manufacturability by streamlining the manufacturing process, reducing susceptibility to defects and process variations, and ultimately improving the reliability and manufacturability of production.
Authors
- Kai-Chuan Kan
- Ching-Kuei Shih (ORCID: https://orcid.org/0009-0003-5660-1278)
- Chunying Song (ORCID: https://orcid.org/0009-0003-3958-535X)
- Jian‐Hsing Lee (ORCID: https://orcid.org/0000-0001-5903-6890)
- Ke‐Horng Chen (ORCID: https://orcid.org/0000-0001-9589-6521)
- Po‐Yi Tsai (ORCID: https://orcid.org/0000-0003-4804-5251)
- Yu-Ming Kuo (ORCID: https://orcid.org/0000-0002-2371-8475)
- Chih-Cherng Liao
- Yu-Jui Chang
Institutions
- National Yang Ming Chiao Tung University (TW)
- Vanguard International Semiconductor (Taiwan) (TW)
Publication Details
- Journal
- IEEE Transactions on Semiconductor Manufacturing
- Published
- 2024-12-18
- DOI
- https://doi.org/10.1109/tsm.2024.3519780
- Primary Topic
- Industrial Vision Systems and Defect Detection
- Type
- article
- Field-Weighted Citation Impact
- 0.00