Clamping Effect of Dielectric and Ferroelectric Properties in ScAlN
The dielectric constant of piezoelectric film is highly dependent on the frequency of electric field and mechanical constraint. In this work, the frequency and substrate clamping effects on the dielectric constant of Sc-doped AlN (ScAlN) are experimentally examined, taking released and mounted capacitors as testing vehicles. Also, since ScAlN also possesses ferroelectricity, the clamping effect of polarization switching characteristics is also checked and explained in this work.
Authors
- Yao Zhu (ORCID: https://orcid.org/0000-0002-1582-0816)
- Chen Liu (ORCID: https://orcid.org/0000-0003-1481-6484)
- Li Chen (ORCID: https://orcid.org/0000-0001-5345-1620)
- Ying Zhang (ORCID: https://orcid.org/0000-0002-7557-2965)
- Xinghua Wang (ORCID: https://orcid.org/0000-0003-1825-7595)
- Qingxin Zhang (ORCID: https://orcid.org/0009-0003-9178-4612)
- You Qian (ORCID: https://orcid.org/0000-0002-1322-3356)
Institutions
- Agency for Science, Technology and Research (SG)
- Institute of Microelectronics (SG)
Publication Details
- Published
- 2024-09-22
- DOI
- https://doi.org/10.1109/uffc-js60046.2024.10793920
- Primary Topic
- Acoustic Wave Resonator Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Science and Engineering Research Council