Physical properties of LiNbO<sub>3</sub> films with controlled stoichiometry grown by DLI-CVD
Y-oriented LiNbO3 films with single-crystal quality were deposited on M-sapphire substrates using direct liquid injection CVD. Significant effort was dedicated to ensuring films with controlled and uniform Li₂O composition (±0.05 mol%) across 4-inch wafers, as well as achieving nearly stoichiometric growth. 33°Y-textured LiNbO3 films on Pt electrode have demonstrated e31 piezoelectric coefficient of -2.4 C/m<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>.
Authors
- Ausrine Bartasyte (ORCID: https://orcid.org/0000-0002-8862-2669)
- Pascal Boulet (ORCID: https://orcid.org/0000-0003-0684-4397)
- Stefania Oliveri
- Samuel H. Margueron (ORCID: https://orcid.org/0000-0003-2971-1351)
- Jean-Manuel Decams (ORCID: https://orcid.org/0000-0002-4032-366X)
- Quentin Micard (ORCID: https://orcid.org/0000-0003-1977-1721)
- Vincent Astié (ORCID: https://orcid.org/0000-0001-6548-178X)
- L. La Spina
Institutions
- Centre National de la Recherche Scientifique (FR)
- Franche-Comté Électronique Mécanique Thermique et Optique - Sciences et Technologies (FR)
- Institut Jean Lamour (FR)
- École Nationale Supérieure de Mécanique et des Microtechniques (FR)
Publication Details
- Published
- 2024-09-22
- DOI
- https://doi.org/10.1109/uffc-js60046.2024.10793940
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00