Thickness-Dependent Switching and Device-to-Device Uniformity Analysis of Al_0.7Sc_0.3N-Based Ferroelectric Capacitor on 8-inch Si Wafer

In this paper, thickness-dependent ferroelectric switching and device-to-device switching uniformity are investigated in 30% Sc-doped aluminum nitride (Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf>Sc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf>N) film-based metal-ferroelectric-metal (MFM) capacitors on an 8-inch Si wafer. To analyze device-to-device uniformity, 50 pristine devices are randomly taken from four dies across the 8-inch wafer for each thickness. A very tight distribution (smaller coefficient of variation i.e, σ/μ ratio) is observed in cumulative probability distribution of remnant polarization (P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</inf> with σ/μ ratio of 5.8 %), coercive field (E<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</inf> with σ/μ ratio of 1.12 %) and non-switching leakage current (σ/μ ratio of 2.38 %) for the thinner 30 nm Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf>Sc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf>N film, indicating its superior uniformity as well as its usefulness for advanced non-volatile memory (NVM) applications.