Broadband Spurious Mitigation of LLSAW Devices on Rotated Y-Cut LiNbO <sub>3</sub> /SiO <sub>2</sub> /SiC

This paper reports on the demonstration of high-frequency and spurious-free longitudinal leaky surface acoustic wave (LLSAW) filters utilizing a 170° Y-90° X LiNbO3/SiO2/SiC heterostructure. The efficient spurious suppression in a wide frequency range is attained through optimizing LiNbO3 cut orientation, propagation angles and electrode thickness, specifically employing 170° Y-90° X LiNbO3 on a typical piezo-on-insulator platform. The implemented resonators and filter on 170° Y-90° X LiNbO3(250 nm)/SiO2(200 nm)/SiC stack demonstrate excellent spurious-free responses, with excellent out-of-band rejection across 1-8 GHz and a low insertion loss of 2.6 dB in transmit band, highlighting its potential to address band co-existence issues in advanced 5G or Wi-Fi 6/6E applications.

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Publication Details

Published
2024-09-22
DOI
https://doi.org/10.1109/uffc-js60046.2024.10793959
Citations
2
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
0.68

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article

Broadband Spurious Mitigation of LLSAW Devices on Rotated Y-Cut LiNbO 3 /SiO 2 /SiC

Huiping Xu, Sulei Fu, Qiaozhen Zhang, Xinchen Zhou et al.
2 citations
Semiconductor Quantum Structures and Devices
0.68
article

Broadband Spurious Mitigation of LLSAW Devices on Rotated Y-Cut LiNbO 3 /SiO 2 /SiC

Huiping Xu, Sulei Fu, Qiaozhen Zhang, Xinchen Zhou, Boyuan Xiao, Feng Pan, Cheng Song, Fei Zeng, Shuai Zhang, Peisen Liu, Weibiao Wang, Qiufeng Xu, Rui Wang
article en
2 citations

Abstract

This paper reports on the demonstration of high-frequency and spurious-free longitudinal leaky surface acoustic wave (LLSAW) filters utilizing a 170° Y-90° X LiNbO3/SiO2/SiC heterostructure. The efficient spurious suppression in a wide frequency range is attained through optimizing LiNbO3 cut orientation, propagation angles and electrode thickness, specifically employing 170° Y-90° X LiNbO3 on a typical piezo-on-insulator platform. The implemented resonators and filter on 170° Y-90° X LiNbO3(250 nm)/SiO2(200 nm)/SiC stack demonstrate excellent spurious-free responses, with excellent out-of-band rejection across 1-8 GHz and a low insertion loss of 2.6 dB in transmit band, highlighting its potential to address band co-existence issues in advanced 5G or Wi-Fi 6/6E applications.

Shanghai Normal University (CN), Tsinghua University (CN)
National Natural Science Foundation of China, Natural Science Foundation of Beijing Municipality, National Key Research and Development Program of China
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Semiconductor Quantum Structures and Devices
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Broadband Spurious Mitigation of LLSAW Devices on Rotated Y-Cut LiNbO <sub>3</sub> /SiO <sub>2</sub> /SiC — Huiping Xu, Sulei Fu, et al. · (2024) | TGRS Research Map | TGRS