High-Q Longitudinal Leaky SAW Resonators at &gt; 4 GHz on LiNbO<sub>3</sub>/SiO<sub>2</sub>/SiC Platform

This work demonstrates a high quality factor (Q) longitudinal leaky (LL) mode surface acoustic wave (SAW) resonator using LiNbO3/SiO2/SiC substrate. The fabricated LL-SAW resonator shows a high admittance ratio of 71.5 dB, a large electromechanical coupling $\left( {k_t^2} \right)$ of 21.03% and a high Q<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> of 935, hence resulting in an excellent figure-of-merit (FOM) of 196.4 at 4.4 GHz. For comparison, the LL-SAW resonator was also fabricated on LiNbO3/SiC substrate, showing a significantly lower Q<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf>, a lower $k_t^2$, and a stronger out-of-band spurious mode.

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Published
2024-09-22
DOI
https://doi.org/10.1109/uffc-js60046.2024.10794012
Citations
1
Primary Topic
Acoustic Wave Resonator Technologies
Type
article
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High-Q Longitudinal Leaky SAW Resonators at > 4 GHz on LiNbO3/SiO2/SiC Platform

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article

High-Q Longitudinal Leaky SAW Resonators at > 4 GHz on LiNbO3/SiO2/SiC Platform

Kai Huang, Juxing He, Xinjian Ke, Mijing Sun, Xiaoli Fang, Xin Ou, Dongchen Sui, Shibin Zhang, Pengcheng Zheng
article en
1 citations

Abstract

This work demonstrates a high quality factor (Q) longitudinal leaky (LL) mode surface acoustic wave (SAW) resonator using LiNbO3/SiO2/SiC substrate. The fabricated LL-SAW resonator shows a high admittance ratio of 71.5 dB, a large electromechanical coupling $\left( {k_t^2} \right)$ of 21.03% and a high Q<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> of 935, hence resulting in an excellent figure-of-merit (FOM) of 196.4 at 4.4 GHz. For comparison, the LL-SAW resonator was also fabricated on LiNbO3/SiC substrate, showing a significantly lower Q<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf>, a lower $k_t^2$, and a stronger out-of-band spurious mode.

Shanghai Institute of Microsystem and Information Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 50%
Acoustic Wave Resonator Technologies
0.18
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