Gate Driving Method For Hybrid Si/SiC Switches Based On SPWM Modulation

Hybrid Si/SiC switches (HyS) have garnered substantial attention owing to their cost-effectiveness and high efficiency. Nevertheless, their utilization poses challenges as conventional driving methods cannot accommodate their multifaceted control degrees of freedom. Consequently, exploring a driving method capable of implementing diverse control strategies is crucial for practical applications of HyS. To this end, this paper proposes a driving method for HyS based on SPWM modulation. The method can realize all kinds of control strategies of HyS while maintaining a simple peripheral circuit design. Furthermore, the method takes into account the effect of power factor so that the HyS converter is able to operate at power factor -1 to 1. The driving method proposed in this paper makes it possible for the HyS converter to be put into application.