Photoluminescence mapping of laser-damaged β-Ga2O3
Photoluminescence (PL) mapping was utilized to investigate damage in β-Ga<sub>2</sub>O<sub>3</sub> epilayers induced by 1064 nm laser pulses. The intensity and position of the intrinsic UV band were determined and plotted as a false-color image. Two types of damage were identified: circular damage and damage cracks. Circular damage shows lower UV PL intensity than the surrounding material with color centers in a “halo” around the damaged region. Damage cracks are aligned with the a and c axes and show higher PL intensity than undamaged material. Defects in the as-grown material were revealed by shifts in the UV band energy.
Authors
- Sriram Krishnamoorthy (ORCID: https://orcid.org/0000-0002-4682-1002)
- John Stuart McCloy (ORCID: https://orcid.org/0000-0001-7476-7771)
- Clint D. Frye (ORCID: https://orcid.org/0000-0002-6370-8167)
- Arkka Bhattacharyya (ORCID: https://orcid.org/0000-0002-7209-5681)
- Matthew D. McCluskey (ORCID: https://orcid.org/0000-0002-0786-4106)
- Jesse Huso (ORCID: https://orcid.org/0000-0002-8894-967X)
- Lars F. Voss (ORCID: https://orcid.org/0000-0002-6349-8219)
- Joel B. Varley (ORCID: https://orcid.org/0000-0002-5384-5248)
Institutions
- Lawrence Livermore National Laboratory (US)
- University of California, Santa Barbara (US)
- Klar Scientific (United States) (US)
- Washington State University (US)
Publication Details
- Published
- 2024-12-18
- DOI
- https://doi.org/10.1117/12.3032501
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00