Volumetric carrier injection in InGaN quantum well light emitting diodes

InGaN/GaN quantum well (QW) light emitting diodes (LEDs) are essential components of solid-state lighting and displays. However, the efficiency of long wavelength (green to red) devices is inferior to that of blue LEDs. To a large degree, this occurs because the equilibration of injected holes between multiple QWs of the active region is hindered by GaN quantum confinement and polarization barriers. This drawback could be overcome by volumetric hole injection into all QWs through semipolar QWs present on the facets of V-defects that form at threading dislocations in polar GaN-based structures. In this work, we have tested the viability of this injection mechanism and studied its properties by time-resolved and near-field spectroscopy techniques. We have found that indeed the hole injection via the V-defects does take place, the mechanism is fast, and the hole spread from the V-defect is substantial, making this type of injection feasible for efficient long wavelength GaN LEDs.

Authors

Institutions

Publication Details

Journal
Lithuanian Journal of Physics
Published
2024-12-13
DOI
https://doi.org/10.3952/physics.2024.64.4.2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Volumetric carrier injection in InGaN quantum well light emitting diodes

Shuji Nakamura, Rinat Yapparov, Steven P. DenBaars, S. Marcinkevičius et al.
Lithuanian Journal of Physics
GaN-based semiconductor devices and materials
article

Volumetric carrier injection in InGaN quantum well light emitting diodes

Shuji Nakamura, Rinat Yapparov, Steven P. DenBaars, S. Marcinkevičius, James S. Speck, Jacob Ewing, Tanay Tak, Feng Wu
article en

Abstract

InGaN/GaN quantum well (QW) light emitting diodes (LEDs) are essential components of solid-state lighting and displays. However, the efficiency of long wavelength (green to red) devices is inferior to that of blue LEDs. To a large degree, this occurs because the equilibration of injected holes between multiple QWs of the active region is hindered by GaN quantum confinement and polarization barriers. This drawback could be overcome by volumetric hole injection into all QWs through semipolar QWs present on the facets of V-defects that form at threading dislocations in polar GaN-based structures. In this work, we have tested the viability of this injection mechanism and studied its properties by time-resolved and near-field spectroscopy techniques. We have found that indeed the hole injection via the V-defects does take place, the mechanism is fast, and the hole spread from the V-defect is substantial, making this type of injection feasible for efficient long wavelength GaN LEDs.

Lithuanian Journal of PhysicsVol. 64(4)
University of California, Santa Barbara (US), AlbaNova (SE), KTH Royal Institute of Technology (SE)
National Science Foundation, U.S. Department of Energy, Vetenskapsrådet, Energimyndigheten, Office of Energy Efficiency and Renewable Energy, University of California, Santa Barbara, Solid State Lighting and Energy Electronics Center, University of California Santa Barbara, Office of Energy Efficiency, Sandia National Laboratories
Affordable and clean energy
Openalex Percentile: Top 86%
GaN-based semiconductor devices and materials
DOIOpen Access PDFOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.