The polarization switching in nanoscale with an anisotropic 2D magnetic semiconductor

Here we present a proof-of-concept device demonstrating the feasibility to control the light polarization using the properties of the magnetic 2D materials. The studied structure consists of a diluted magnetic semiconductor quantum well and a thin layer of CrSBr. We show that by application of the external field we can switch the sign of the polarization of the emitted light. The theoretical modeling confirms that such a switching is a direct consequence of a colossal shift of the exciton lines observed in the high energy range of the CrSBr spectra. Owing to this mechanism, the full rotation of the polarization state can be realized in a layer as thin as few hundred nanometers.

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Publication Details

Journal
Solid State Communications
Published
2024-12-16
DOI
https://doi.org/10.1016/j.ssc.2024.115798
Citations
1
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.12
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article

The polarization switching in nanoscale with an anisotropic 2D magnetic semiconductor

Kseniia Mosina, A. Łopion, W. Pacuski, T. Kazimierczuk et al.
1 citations
Solid State Communications
2D Materials and Applications
0.12
article

The polarization switching in nanoscale with an anisotropic 2D magnetic semiconductor

Kseniia Mosina, A. Łopion, W. Pacuski, T. Kazimierczuk, Zdeněk Sofer, P. Kossacki, C. Faugeras, Aljoscha Söll, R. Komar
article en
1 citations

Abstract

Here we present a proof-of-concept device demonstrating the feasibility to control the light polarization using the properties of the magnetic 2D materials. The studied structure consists of a diluted magnetic semiconductor quantum well and a thin layer of CrSBr. We show that by application of the external field we can switch the sign of the polarization of the emitted light. The theoretical modeling confirms that such a switching is a direct consequence of a colossal shift of the exciton lines observed in the high energy range of the CrSBr spectra. Owing to this mechanism, the full rotation of the polarization state can be realized in a layer as thin as few hundred nanometers.

Solid State CommunicationsVol. 397
Warsaw University of Technology (PL), Centre National de la Recherche Scientifique (FR), University of Münster (DE), Laboratoire National des Champs Magnétiques Intenses (FR), Université Grenoble Alpes (FR), University of Chemistry and Technology, Prague (CZ)
Affordable and clean energy
Openalex Percentile: Top 57%
2D Materials and Applications
0.12
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The polarization switching in nanoscale with an anisotropic 2D magnetic semiconductor — Kseniia Mosina, A. Łopion, et al. · Solid State Communications (2024) | TGRS Research Map | TGRS