A silicon-based InGaN/GaN microbelt blue light-emitting-diode fabricated <i>via</i> low-temperature direct bonding
Integrating a nitride semiconductor light source on Si is a key to building wide-spectrum photonic systems; however, there have been many challenges to growing nitride semiconductors directly on a Si substrate.
Authors
- Chenguang He (ORCID: https://orcid.org/0000-0002-3683-9401)
- Xingfu Wang (ORCID: https://orcid.org/0000-0001-7450-6723)
- Zhitao Chen (ORCID: https://orcid.org/0000-0003-3909-1061)
- Kang Zhang (ORCID: https://orcid.org/0000-0001-9151-0206)
- Qiao Wang (ORCID: https://orcid.org/0000-0001-7701-7423)
- Huan Chang (ORCID: https://orcid.org/0000-0002-5924-9826)
- Peishan Li (ORCID: https://orcid.org/0000-0002-6881-396X)
- Zexin Dong
- Yuqing Yang (ORCID: https://orcid.org/0009-0007-7325-7981)
- Hui Wang (ORCID: https://orcid.org/0000-0002-3558-0055)
Institutions
- University of Electronic Science and Technology of China (CN)
- South China Normal University (CN)
- Guangdong Academy of Sciences (CN)
- Institute of Semiconductors (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2024-12-16
- DOI
- https://doi.org/10.1039/d4tc03237c
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.31