An ionic liquid assisted <i>in-situ</i> growth of large-area and high-crystal-quality perovskite single-crystal thin films

<i>In-situ</i> growth of perovskite single-crystal thin films (PeSCTFs) on the transport layer is crucial for achieving high-performance perovskite optoelectronic devices, such as solar cells, light emitting diodes, photodetectors, etc. However, <i>in-situ</i> growing PeSCTF on the transport layer with large-area, high-crystal-quality, and low-trap-density simultaneously remains challenging. This work proposes a method for <i>in-situ</i> growing large-area and low-trap-density MAPbBr<sub>3</sub> SCTFs on the poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) transport layer with the assistance of cesium(I) bis(trifluoromethanesulfonyl)imide (CsTFSI) ionic liquid. After introducing the CsTFSI ionic liquid, the Cs<sup>+</sup> ions enter the MAPbBr<sub>3</sub> lattice, reducing the formation energy, and the coordination between the lone pair electrons of O in TFSI<sup>–</sup> and the empty orbital of Pb in MAPbBr<sub>3</sub> passivates the dangling bond defects of Pb, facilitating the formation of MAPbBr<sub>3</sub> SCTFs with high-crystal-quality. Moreover, the strong interaction between TFSI<sup>–</sup> and the substrate can enhance wettability and reduce the contact angle, thereby promoting faster solute diffusion and enabling the growth of larger-area MAPbBr<sub>3</sub> SCTFs. Therefore, compared to the sample without CsTFSI addition, the MAPbBr<sub>3</sub> SCTFs with CsTFSI addition exhibit better thermal stability, larger area (increased from 1.79 to 19.68 mm<sup>2</sup>, approximately a 10-fold increase), lower trap density (decreased from 6.86 × 10<sup>12</sup> to 5.39 × 10<sup>12</sup> cm<sup>–3</sup>), and higher carrier mobility (increased from 0.72 to 0.84 cm<sup>2</sup>∙V<sup>–1</sup>∙s<sup>–1</sup>). Moreover, the performance of the photodetector with CsTFSI, including responsivity, external quantum efficiency (EQE), detectivity, and response speed, also increased significantly. This work provides an effective method for the <i>in-situ</i> growth of PeSCTFs with large-area, high-crystal-quality, and low-trap-density simultaneously on the transport layer.

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Publication Details

Journal
Nano Research
Published
2024-12-16
DOI
https://doi.org/10.26599/nr.2025.94907046
Citations
2
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
0.42

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article

An ionic liquid assisted in-situ growth of large-area and high-crystal-quality perovskite single-crystal thin films

Dengfeng Luo, Zhaojin Wang, Qingqian Wang, Aung Ko Ko Kyaw et al.
2 citations
Nano Research
Perovskite Materials and Applications
0.42
article

An ionic liquid assisted in-situ growth of large-area and high-crystal-quality perovskite single-crystal thin films

Dengfeng Luo, Zhaojin Wang, Qingqian Wang, Aung Ko Ko Kyaw, Zhongyuan Guan, Min Liao, Hongmei Zhu, Zhulu Song, Kai Wang, Dan Wu, Chengwei Shan
article en
2 citations

Abstract

<i>In-situ</i> growth of perovskite single-crystal thin films (PeSCTFs) on the transport layer is crucial for achieving high-performance perovskite optoelectronic devices, such as solar cells, light emitting diodes, photodetectors, etc. However, <i>in-situ</i> growing PeSCTF on the transport layer with large-area, high-crystal-quality, and low-trap-density simultaneously remains challenging. This work proposes a method for <i>in-situ</i> growing large-area and low-trap-density MAPbBr<sub>3</sub> SCTFs on the poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) transport layer with the assistance of cesium(I) bis(trifluoromethanesulfonyl)imide (CsTFSI) ionic liquid. After introducing the CsTFSI ionic liquid, the Cs<sup>+</sup> ions enter the MAPbBr<sub>3</sub> lattice, reducing the formation energy, and the coordination between the lone pair electrons of O in TFSI<sup>–</sup> and the empty orbital of Pb in MAPbBr<sub>3</sub> passivates the dangling bond defects of Pb, facilitating the formation of MAPbBr<sub>3</sub> SCTFs with high-crystal-quality. Moreover, the strong interaction between TFSI<sup>–</sup> and the substrate can enhance wettability and reduce the contact angle, thereby promoting faster solute diffusion and enabling the growth of larger-area MAPbBr<sub>3</sub> SCTFs. Therefore, compared to the sample without CsTFSI addition, the MAPbBr<sub>3</sub> SCTFs with CsTFSI addition exhibit better thermal stability, larger area (increased from 1.79 to 19.68 mm<sup>2</sup>, approximately a 10-fold increase), lower trap density (decreased from 6.86 × 10<sup>12</sup> to 5.39 × 10<sup>12</sup> cm<sup>–3</sup>), and higher carrier mobility (increased from 0.72 to 0.84 cm<sup>2</sup>∙V<sup>–1</sup>∙s<sup>–1</sup>). Moreover, the performance of the photodetector with CsTFSI, including responsivity, external quantum efficiency (EQE), detectivity, and response speed, also increased significantly. This work provides an effective method for the <i>in-situ</i> growth of PeSCTFs with large-area, high-crystal-quality, and low-trap-density simultaneously on the transport layer.

Nano ResearchVol. 18(1)
Southern University of Science and Technology (CN), Peng Cheng Laboratory (CN), Shenzhen Technology University (CN)
Shenzhen Technology University, National Natural Science Foundation of China, China Postdoctoral Science Foundation, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 36%
Perovskite Materials and Applications
0.42
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