Molecular‐Templated ALD on Mixed SAM to Achieve Unimolecular Dispersion and In‐Process Fluorescent Monitoring of Template Molecules

Abstract Atomic layer deposition (ALD) in the presence of organic template molecules on substrates (molecular‐templated ALD) is a promising technique for designing a molecular selectivity with thermal robustness onto the surfaces of metal oxides, which are required for heterogeneous catalysts and molecular sensing. However, self‐aggregations of template molecules significantly impair the selectivity of the resulting molecules, which is difficult to prevent or observe. Here, a rational method is presented for uni‐molecularly dispersing template molecules and revealing their state in the molecular‐templated ALD process. The environment‐sensitive fluorescence of pyrene is utilized as a probe to visualize the microenvironments around template molecules. The dispersion of pyrene moieties in OH‐terminated SAMs allowed the pyrene molecules to be 1) covalently immobilized, 2) isolated from other pyrene molecules, and 3) surrounded by OH groups that act as ALD initiation sites. Systematic spectroscopic measurements of pyrene probes revealed the successful ALD of metal oxides surrounding template molecules without their undesired aggregations. Furthermore, emission enhancements are observed when Al 2 O 3 is used as the surrounding metal oxide. The amplification of pyrene fluorescence intensity, lifetime, and quantum yield is attributed to the suppression of non‐radiative decay, indicating that the Al 2 O 3 layer has grown closely around a single organic molecule.

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Publication Details

Journal
Advanced Materials Technologies
Published
2024-12-13
DOI
https://doi.org/10.1002/admt.202401639
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.21

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Molecular‐Templated ALD on Mixed SAM to Achieve Unimolecular Dispersion and In‐Process Fluorescent Monitoring of Template Molecules

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article

Molecular‐Templated ALD on Mixed SAM to Achieve Unimolecular Dispersion and In‐Process Fluorescent Monitoring of Template Molecules

Midori Ikeuchi, Wataru Tanaka, Jiangyang Liu, Tsunaki Takahashi, Takeshi Ono, Jun Terao, Masaki Kanai, Hiroshi Masai, Takuro Hosomi, Takeshi Yanagida, Hikaru Saito
article en
1 citations

Abstract

Abstract Atomic layer deposition (ALD) in the presence of organic template molecules on substrates (molecular‐templated ALD) is a promising technique for designing a molecular selectivity with thermal robustness onto the surfaces of metal oxides, which are required for heterogeneous catalysts and molecular sensing. However, self‐aggregations of template molecules significantly impair the selectivity of the resulting molecules, which is difficult to prevent or observe. Here, a rational method is presented for uni‐molecularly dispersing template molecules and revealing their state in the molecular‐templated ALD process. The environment‐sensitive fluorescence of pyrene is utilized as a probe to visualize the microenvironments around template molecules. The dispersion of pyrene moieties in OH‐terminated SAMs allowed the pyrene molecules to be 1) covalently immobilized, 2) isolated from other pyrene molecules, and 3) surrounded by OH groups that act as ALD initiation sites. Systematic spectroscopic measurements of pyrene probes revealed the successful ALD of metal oxides surrounding template molecules without their undesired aggregations. Furthermore, emission enhancements are observed when Al 2 O 3 is used as the surrounding metal oxide. The amplification of pyrene fluorescence intensity, lifetime, and quantum yield is attributed to the suppression of non‐radiative decay, indicating that the Al 2 O 3 layer has grown closely around a single organic molecule.

Advanced Materials TechnologiesVol. 10(8)
Kyushu University (JP), Tokyo University of the Arts (JP), The University of Tokyo (JP)
Japan Science and Technology Corporation, Ministry of Education, Culture, Sports, Science and Technology, Japan Society for the Promotion of Science
Life in Land
Openalex Percentile: Top 45%
Semiconductor materials and devices
0.21
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