A Bifunctional Tunneling Device for Photodetection and Electroluminescence Using van der Waals Heterostructure

Abstract Two‐dimensional (2D) materials are widely used in various optical, electronic, and optoelectronic devices. However, the realization of visible light emission and near‐infrared photodetection functions in a single device remains a challenge. Here, an integrated dual‐functional device is developed by manipulating the excitons of WS 2 within a graphene/hBN/WS 2 /graphene heterostructure. When operating as a photodetector at low external bias, the dark current is well suppressed by the hBN layer. With the excellent two‐photon absorption (TPA) property of monolayer WS 2 , the photoresponse range of the photodetector can be extended to the near‐infrared region, achieving a responsivity of up to 0.19 mA/W at 1145 nm. At high external bias, the device can work in light‐emitting mode, in which the electroluminescence (EL) wavelength can be tuned via gate voltage. This atomically thin device opens up possibilities for applications in miniaturized display, sensing, and monitoring systems.

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Publication Details

Journal
Advanced Electronic Materials
Published
2024-12-12
DOI
https://doi.org/10.1002/aelm.202400558
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

A Bifunctional Tunneling Device for Photodetection and Electroluminescence Using van der Waals Heterostructure

Xuejin Zhang, Yanqing Lu, Xiaoting Hong, Zihao Dong et al.
Advanced Electronic Materials
2D Materials and Applications
article

A Bifunctional Tunneling Device for Photodetection and Electroluminescence Using van der Waals Heterostructure

Xuejin Zhang, Yanqing Lu, Xiaoting Hong, Zihao Dong, Qihang Zhang, Kai Liu, Qian‐jin Wang, Sheng‐Quan Fu, Yong‐yuan Zhu
article en

Abstract

Abstract Two‐dimensional (2D) materials are widely used in various optical, electronic, and optoelectronic devices. However, the realization of visible light emission and near‐infrared photodetection functions in a single device remains a challenge. Here, an integrated dual‐functional device is developed by manipulating the excitons of WS 2 within a graphene/hBN/WS 2 /graphene heterostructure. When operating as a photodetector at low external bias, the dark current is well suppressed by the hBN layer. With the excellent two‐photon absorption (TPA) property of monolayer WS 2 , the photoresponse range of the photodetector can be extended to the near‐infrared region, achieving a responsivity of up to 0.19 mA/W at 1145 nm. At high external bias, the device can work in light‐emitting mode, in which the electroluminescence (EL) wavelength can be tuned via gate voltage. This atomically thin device opens up possibilities for applications in miniaturized display, sensing, and monitoring systems.

Advanced Electronic MaterialsVol. 11(5)
Collaborative Innovation Center of Advanced Microstructures (CN), Nanjing University (CN)
National Natural Science Foundation of China, Government of Jiangsu Province, Natural Science Foundation of Jiangsu Province, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 85%
2D Materials and Applications
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